Low-temperature epitaxial thickening of sub-micron poly-Si seeding layers on glass made by aluminium-induced crystallisation

被引：10

作者：

Harder, NP ^{[1
]}

Xia, JA ^{[1
]}

Oelting, S ^{[1
]}

Nast, O ^{[1
]}

Widenborg, P ^{[1
]}

Aberle, AG ^{[1
]}

机构：

[1] Univ New S Wales, Sydney, NSW 2052, Australia

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915836

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The formation of device-grade polycrystalline silicon (poly-Si) films on standard glass at low temperature (i.e., below the softening point of the glass) using simple and fast processes is one of the major challenges for low-cost thin-film solar cells. In this paper, we report what is believed to be the first successful realisation of thick (similar to5 mum), large-grained (similar to5 mum), continuous poly-Si films on glass at T < 650<degrees>C. This technological breakthrough has been achieved by using ion-assisted deposition at 630 degreesC for epitaxially thickening a thin (similar to0.4 mum) seeding layer made on glass by aluminium-induced crystallisation.

引用

页码：351 / 354

页数：4

共 18 条

[1] Crystalline Si thin-film solar cells: a review [J].