CONCENTRATION TRANSIENT ANALYSIS OF ANTIMONY SURFACE SEGREGATION DURING SI(001) MOLECULAR-BEAM EPITAXY

被引：9

作者：

MARKERT, LC ^{[1
]}

GREENE, JE ^{[1
]}

NI, WX ^{[1
]}

HANSSON, GV ^{[1
]}

SUNDGREN, JE ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

THIN SOLID FILMS | 1991年 / 206卷 / 1-2期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0040-6090(91)90393-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antimony surface segregation during Si(001) molecular beam epitaxy (MBE) was investigated at temperatures T(S) = 515-800-degrees-C using concentration transient analysis (CTA). The dopant surface coverage-theta, bulk fraction-gamma,incorporation probability-sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(S) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(S) with theta(Sb) values up to 0.9 monolayers (ML): in films doped with Sb+ ions accelerated by 100 V, theta(Sb) was less than or equal to 4 x 10(-3) ML. Surface segregation of coevaporated antimony was kinetically limited for the film growth conditions in these experiments.

引用

页码：59 / 63

页数：5

共 24 条

[1] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].