Piezoresistive effect in AlN/GaN short range superlattice structures

被引：9

作者：

Gaska, R ^{[1
]}

Bykhovski, AD

Shur, MS

Kaminskii, VV

Soloviov, SM

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Russian Acad Sci, AF Ioffe Inst Phys & Technol, St Petersburg 194021, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a strong piezoresistive effect in AlN-GaN short-range superlattices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially larger than the values of the gauge factor reported for GaN-AlN-GaN semiconductor-insulator-semiconductor structures. The measured data are in good agreement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN-GaN-based materials for the development of piezoelectric and piezoresistive sensors. (C) 1999 American Institute of Physics. [S0021-8979(99)03007-8].

引用

页码：6932 / 6934

页数：3

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