Pulsed laser deposited Nb doped TiO2 as a transparent conducting oxide

被引：56

作者：

Dabney, Matthew S. ^{[1
]}

van Hest, Maikel F. A. M. ^{[1
]}

Teplin, Charles W. ^{[1
]}

Arenkiel, S. Phil ^{[2
]}

Perkins, John D. ^{[1
]}

Ginley, David S. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO USA

[2] S Dakota Sch Mines & Technol, Rapid City, SD USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

关键词：

transparent conducting oxides; anatase; titanium dioxide; pulsed laser deposition; epitaxial;

D O I：

10.1016/j.tsf.2007.10.093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nb doped TiO2 (Nb:TiO2) is a promising indium-free transparent conducting oxide. We have examined the growth of Nb:TiO2 thin films by pulsed laser deposition (PLD) on SrTiO3, LaAlO3, and fused silica. For < 004 > oriented anatase Nb:TiO2 films grown on SrTiO3 by PLD at 550 degrees C, the conductivity can be as high as 2500 S/cm. A nearly thickness independent conductivity for Nb:TiO2 demonstrates that the conductivity is a bulk property and not a substrate interface effect. In addition, Nb:TiO2 films deposited at room temperature were annealed at temperatures up to 750 degrees C in either vacuum or 1.3 X 10(-3) Pa O-2. For these films, conductivities as high as 3300 S/cm on SrTiO3 and 85 S/cm on LaAlO3 substrates were obtained for the highest temperature vacuum anneals, albeit with some loss in transparency. Published by Elsevier B.V.

引用

页码：4133 / 4138

页数：6

共 19 条

[1] Electronic and optical properties of anatase TiO2 [J].