Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3

Al2O3 incorporated HfO2 films grown by atomic layer deposition were investigated using various measurement tools. The accumulation capacitance of the Al2O3 incorporated into HfO2 film increases as the postannealing temperature increases because of changes in interfacial and upper layer thickness and in interfacial stoichiometry. The core-level energy state of a 15 Angstrom thick film shows a shift to higher binding energy, as the result of silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects are enhanced compared to a pure HfO2 film. Any dissociated Al2O3 on the film surface is completely removed by a vacuum annealing treatment over 850degreesC, while HfO2 contributes to Hf silicide formation on the surface of the film. (C) 2004 American Institute of Physics.