共 10 条
- [1] Influence of 1nm-thick structural "strained-layer" near SiO2/Si interface on sub-4nm-thick gate oxide reliability [J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 175 - 178
- [2] Structural transition layer at SiO2/Si interfaces [J]. PHYSICAL REVIEW B, 1999, 59 (08): : 5617 - 5621
- [4] Development of high purity one ATM ozone source -: Its application to ultrathin SiO2 film formation on Si substrate [J]. ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 121 - 126
- [5] Ultrathin silicon dioxide formation by ozone on ultraflat Si surface [J]. ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 21 - 26
- [6] X-ray photoelectron spectroscopy (XPS) analysis of oxide formation on silicon with high-purity ozone [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (12A): : L1606 - L1608
- [7] NONDESTRUCTIVE AND QUANTITATIVE DEPTH PROFILING ANALYSIS OF ION-BOMBARDED TA2O5 SURFACES BY MEDIUM-ENERGY ION-SCATTERING SPECTROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 1325 - 1330
- [8] Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 1275 - 1279
- [9] Comparison of initial oxidation of Si(111)7x7 with ozone and oxygen investigated by second harmonic generation [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04): : 2441 - 2445