Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone

被引:35
作者
Kurokawa, A [1 ]
Nakamura, K
Ichimura, S
Moon, DW
机构
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
关键词
D O I
10.1063/1.125798
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate the interfacial Si displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 degrees C. A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide exhibited considerably less Si displacement in the oxide layers near the interface than a thermally grown oxide, which indicates that an ozone oxide is homogenous. These results explain well our previous findings that an ozone oxide exhibits a constant HF etching rate of silicon dioxide while a thermally grown oxide slows the etching rate near the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)03704-9].
引用
收藏
页码:493 / 495
页数:3
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