X-ray photoelectron spectroscopy (XPS) analysis of oxide formation on silicon with high-purity ozone

被引：26

作者：

Kurokawa, A

Ichimura, S

机构：

[1] Electrotechnical laboratory, Tsukuba, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 12A期

关键词：

ozone; silicon oxidation; silicon oxide; suboxide; XPS; Si(111); low-temperature oxidation; hydrogen termination;

D O I：

10.1143/JJAP.34.L1606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Initial oxide formation on a Si(111) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si-2p spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

引用

页码：L1606 / L1608

页数：3

共 10 条

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