OXIDATION-KINETICS OF SI(111) 7X7 IN THE SUBMONOLAYER REGIME

被引:117
作者
GUPTA, P
MAK, CH
COON, PA
GEORGE, SM
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 11期
关键词
D O I
10.1103/PhysRevB.40.7739
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7739 / 7749
页数:11
相关论文
共 59 条
[1]   THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].
ADAMS, AC ;
SMITH, TE ;
CHANG, CC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794
[2]   MEASUREMENT OF OXYGEN ADSORPTION ON SILICON BYELLIPSOMETRY [J].
ARCHER, RJ ;
GOBELI, GW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :343-&
[3]   REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW LETTERS, 1986, 57 (09) :1185-1188
[4]   EFFECTS OF LASER-PULSE CHARACTERISTICS AND THERMAL-DESORPTION PARAMETERS ON LASER-INDUCED THERMAL-DESORPTION [J].
BRAND, JL ;
GEORGE, SM .
SURFACE SCIENCE, 1986, 167 (2-3) :341-362
[5]   MONO-HYDRIDE AND DIHYDRIDE PHASES ON SILICON SURFACES - A COMPARATIVE-STUDY BY EELS AND UPS [J].
BUTZ, R ;
OELLIG, EM ;
IBACH, H ;
WAGNER, H .
SURFACE SCIENCE, 1984, 147 (2-3) :343-348
[6]   OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J].
CAROSELLA, CA ;
COMAS, J .
SURFACE SCIENCE, 1969, 15 (02) :303-+
[7]  
CULBERTSON RJ, 1982, J VAC SCI TECHNOL, V20, P686
[8]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[9]   KINETICS OF THE ADSORPTION OF O-2 AND OF THE DESORPTION OF SIO ON SI(100) - A MOLECULAR-BEAM, XPS, AND ISS STUDY [J].
DEVELYN, MP ;
NELSON, MM ;
ENGEL, T .
SURFACE SCIENCE, 1987, 186 (1-2) :75-114
[10]   OXIDATION OF THE SI(111) (7X7) SURFACE - ELECTRON-ENERGY LOSS SPECTROSCOPY, LOW-ENERGY ELECTRON-DIFFRACTION, AND AUGER-ELECTRON SPECTROSCOPY STUDIES [J].
EDAMOTO, K ;
KUBOTA, Y ;
KOBAYASHI, H ;
ONCHI, M ;
NISHIJIMA, M .
JOURNAL OF CHEMICAL PHYSICS, 1985, 83 (01) :428-436