Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

被引：140

作者：

Jerng, Sahng-Kyoon ^{[1
,2
]}

Yu, Dong Seong ^{[1
,2
]}

Lee, Jae Hong ^{[1
,2
]}

Kim, Christine ^{[3
]}

Yoon, Seokhyun ^{[3
]}

Chun, Seung-Hyun ^{[1
,2
]}

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[3] Ewha Womans Univ, Dept Phys, Seoul 151747, South Korea

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

graphite; molecular beam epitaxy; Raman; oxide; RAMAN-SPECTROSCOPY; GRAPHENE;

D O I：

10.1186/1556-276X-6-565

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp(2) amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials.

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页码：1 / 6

页数：6

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