MG DOPING AND ALLOYING IN ZN3P2 HETEROJUNCTION SOLAR CELLS

被引：20

作者：

Kimball, Gregory M. ^{[1
]}

Lewis, Nathan S. ^{[1
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

SINGLE-CRYSTAL GROWTH; ZINC PHOSPHIDE; ZN3P2; CRYSTALS; TRANSPORT; JUNCTIONS;

D O I：

10.1109/PVSC.2010.5614641

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e. g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P2 Schottky diodes with V-OC values reaching 550 mV, J(SC) values up to 2 1.8 mAlcm(2), and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10(17) to 10(19) cm(-3) Mg impurities compensate p-type doping to form highly resistive Zn3P2. Further device work with modified ITO/MglZn(3)P(2) heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn3P2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn3P2 solar cells.

引用

页码：1039 / 1043

页数：5

共 17 条

[11]

KIMBALL GM, 2008, 33 IEEE PHOT SPEC C

[12] Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2 [J].