Circuit requirement and integration challenges of thin gate dielectrics for ultra small MOSFETs

The trend of CMOS technologies toward highspeed, low-power, and systems-on-a-chip has raised several urgent requirements on the gate dielectrics: (1) limited leakage current, (2) multiple thickness (t(ox)), (3) minimized variation or degradation of device threshold voltage (V-th), transconductance (G(m)), and on-current (I-on) at the finish of the device fabrication due to, e.g., oxide-nitridation-induced degradation or plasma-damage-induced degradation, (4) sustained device lifetime that has been difficult to achieve because of the aggressive device scaling, and (5) a practical and physical mean of qualifying thin gate dielectrics. The significance of each of the above requirements will be discussed, and recent efforts addressing these requirements will be reviewed.