Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer

被引：12

作者：

Kim, HK ^{[1
]}

Lee, KS

Keum, MJ

Kim, KH

机构：

[1] Samsung SDI Co Ltd, Core Technol Lab, Suwon 442391, Gyeonggi Do, South Korea

[2] Kyungwon Univ, Dept Elect & Informat Engn, Sungnam 461701, Gyeonggi Do, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 12期

关键词：

D O I：

10.1149/1.2096362

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of magnetic field shape between indium tin oxide (ITO) targets on electrical characteristics of top-emission organic light emitting diodes (TOLEDs) have been investigated. When the top electrode is prepared with ITO using facing target sputtering (FTS) method, it was found that TOLEDs with ITO layers prepared in the diffused plasma mode showed much lower leakage current density (1 x 10(-5) mA/cm(2) at -6 V) than (1 x 10(-1) mA/cm(2) at -6 V) of TOLEDs prepared with ITO in the concentrated mode. Even when the ITO film itself had the identical electrical, optical, and structural properties, TOLEDs clearly exhibited different electrical properties based on the plasma mode at which the ITO film was sputtered. This suggests that there is less plasma damage from the bombardment of energetic particles in a diffused plasma mode than in a concentrated plasma mode during the FTS process. (c) 2005 The Electrochemical Society.

引用

页码：H103 / H105

页数：3

共 11 条

[1] Achieving full-color organic light-emitting devices for lightweight, flat-panel displays [J].

Burrows, PE ;

Gu, G ;

Bulovic, V ;

Shen, Z ;

Forrest, SR ;

Thompson, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) :1188-1203

[2] High-efficiency, low-drive-voltage, semitransparent stacked organic light-emitting device [J].

Gu, G ;

Khalfin, V ;

Forrest, SR .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2399-2401

[3] A metal-free, full-color stacked organic light-emitting device [J].

Gu, G ;

Parthasarathy, G ;

Forrest, SR .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :305-307

[4] Transparent organic light emitting devices [J].

Gu, G ;

Bulovic, V ;

Burrows, PE ;

Forrest, SR ;

Thompson, ME .

APPLIED PHYSICS LETTERS, 1996, 68 (19) :2606-2608

[5] Analysis of stray magnetic field at the substrate and effect of applying external magnetic field in facing targets sputtering [J].

Ichihara, T ;

Nakagawa, S ;

Naoe, M .

VACUUM, 1998, 51 (04) :715-718

[6] Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes [J].

Kim, HK ;

Kim, DG ;

Lee, KS ;

Huh, MS ;

Jeong, SH ;

Kim, KI ;

Seong, TY .

APPLIED PHYSICS LETTERS, 2005, 86 (18) :1-3

[7] Plasma damage-free deposition of Al cathode on organic light-emitting devices by using mirror shape target sputtering [J].

Kim, HK ;

Kim, DG ;

Lee, KS ;

Huh, MS ;

Jeong, SH ;

Kim, KI ;

Kim, H ;

Han, DW ;

Kwon, JH .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4295-4297

[8] Thin film properties by facing targets sputtering system [J].

Kim, KH ;

Son, IH ;

Song, KB ;

Kong, SH ;

Keum, MJ ;

Nakagawa, S ;

Naoe, M .

APPLIED SURFACE SCIENCE, 2001, 169 :410-414

[9] Ion-beam-induced surface damages on tris-(8-hydroxyquinoline) aluminum [J].

Liao, LS ;

Hung, LS ;

Chan, WC ;

Ding, XM ;

Sham, TK ;

Bello, I ;

Lee, CS ;

Lee, ST .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1619-1621

[10] A metal-free cathode for organic semiconductor devices [J].

Parthasarathy, G ;

Burrows, PE ;

Khalfin, V ;

Kozlov, VG ;

Forrest, SR .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2138-2140

← 1 2 →