Identification of color centers on MgO(001) thin films with scanning tunneling microscopy

被引：126

作者：

Sterrer, M

Heyde, M

Novicki, M

Nilius, N

Risse, T

Rust, HP

Pacchioni, G

Freund, HJ

机构：

[1] Max Planck Gesell, Fritz Haber Inst, Dept Chem Phys, D-14195 Berlin, Germany

[2] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland

[3] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 01期

关键词：

D O I：

10.1021/jp056306f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Localized electronic defects on the surface of a 4 monolayer (ML) thin MgO(001) film deposited on Ag(001) have been investigated by low-temperature scanning tunneling microscopy and spectroscopy. Depending on the location of the defect, we observe for the first time different defect energy levels in the band gap of MgO. The charge state of defects can be manipulated by interactions with the scanning tunneling microscope tip. Comparison with ground state energy levels of color centers on the MgO surface obtained from embedded cluster calculations corroborates the assignment of the defects to singly and doubly charged color centers.

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页码：46 / 49

页数：4

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