Application of strontium silicate yellow phosphor for white light-emitting diodes

被引:430
作者
Park, JK [1 ]
Kim, CH
Park, SH
Park, HD
Choi, SY
机构
[1] KRICT, Adv Mat Div, Taejon 305600, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
关键词
D O I
10.1063/1.1667620
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to develop a yellow phosphor that emits efficiently under the 450-470 nm excitation range, we have synthesized a Eu2+-activated Sr3SiO5 yellow phosphor and attempted to develop white light-emitting diodes (LEDs) by combining them with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the Sr3SiO5:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based Sr3SiO5:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce. (C) 2004 American Institute of Physics.
引用
收藏
页码:1647 / 1649
页数:3
相关论文
共 12 条
[1]   Nearly 100% internal phosphorescence efficiency in an organic light-emitting device [J].
Adachi, C ;
Baldo, MA ;
Thompson, ME ;
Forrest, SR .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5048-5051
[2]  
COLVIN VL, 1994, NATURE, V370, P354, DOI 10.1038/370354a0
[3]  
LIN J, 2001, APPL PHYS LETT, V79, P578
[4]   Amber InGaN-based light-emitting diodes operable at high ambient temperatures [J].
Mukai, T ;
Narimatsu, H ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A) :L479-L481
[5]   Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes [J].
Mukai, T ;
Yamada, M ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (11B) :L1358-L1361
[6]   Red, green, and blue LEDs for white light illumination [J].
Muthu, S ;
Schuurmans, FJP ;
Pashley, MD .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :333-338
[7]   CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689
[8]   HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-GREEN-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :8189-8191
[9]   Luminescence properties of YOBr:Eu phosphors [J].
Park, JK ;
Han, CH ;
Kim, CH ;
Park, HD ;
Choi, SY .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (08) :H11-H13
[10]   Luminescence of Eu2+ in host lattices with three alkaline Earth ions in a row [J].
Poort, SHM ;
vanKrevel, JWH ;
Stomphorst, R ;
Vink, AP ;
Blasse, G .
JOURNAL OF SOLID STATE CHEMISTRY, 1996, 122 (02) :432-435