Aggregation kinetics of thermal double donors in silicon

被引：32

作者：

Lee, YJ ^{[1
]}

von Boehm, J ^{[1
]}

Pesola, M ^{[1
]}

Nieminen, RM ^{[1
]}

机构：

[1] Aalto Univ, COMP, Lab Phys, FIN-02015 Espoo, Finland

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.86.3060

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A general kinetic model based on accurate density-functional-theoretic total-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated kinetics, which incorporates the reactions of associations, dissociations, and isomerizations of all relevant oxygen complexes, is in agreement with experimental annealing studies. The aggregation of TDD's takes place through parallel-consecutive reactions where both mobile oxygen dimers and fast migrating chainlike TDD's capture interstitial oxygen atoms.

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收藏

页码：3060 / 3063

页数：4

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