Activation energies for the formation of oxygen clusters related to the thermal donors in silicon

被引：12

作者：

Hallberg, T

Lindstrom, JL

机构：

[1] Dept. of Phys. and Msrmt. Technology, Linköping University

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期

关键词：

oxygen; silicon; thermal donors;

D O I：

10.1016/0921-5107(95)01262-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of different oxygen clusters related to the thermal donors (TDs) in Czochralski-Si giving rise to IR vibrational modes were investigated after annealing in the range 350-470 degrees C. Activation energies for the formation of clusters related to TDs greater than or equal to TD2 were estimated to be about 1.6-1.9 eV, according to previous investigations, while a lower value of about 1.25 eV was found for the formation of TDl-related clusters. The activation energy for the growth of pre-existing clusters with a band at 1012 cm(-1) was estimated to be about 1.5 eV.

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页码：13 / 15

页数：3

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