SOME NEW FEATURES OF THERMAL DONOR FORMATION IN SILICON AT T-LESS-THAN-800-K

被引：24

作者：

MARKEVICH, VP

MAKARENKO, LF

MURIN, LI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 97卷 / 02期

关键词：

D O I：

10.1002/pssa.2210970255

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K173 / K176

页数：4

共 7 条

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[6] OXYGEN-RELATED THERMAL DONORS IN SILICON - A NEW STRUCTURAL AND KINETIC-MODEL [J].

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[7] NATURE OF THERMAL DONORS IN SILICON-CRYSTALS [J].

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