NATURE OF THERMAL DONORS IN SILICON-CRYSTALS

被引：61

作者：

SUEZAWA, M

SUMINO, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 82卷 / 01期

关键词：

D O I：

10.1002/pssa.2210820130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 242

页数：8

共 12 条

[1] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[2] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :699-707

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].

GOSELE, U ;

TAN, TY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92

[4]

GRAFF K, 1977, SEMICONDUCTOR SILICO, P575

[5]

HELMREICH O, 1977, SEMICONDUCTOR SILICO, P626

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[7]

NAKAYAMA H, 1980, DENKI TSUSHIN GA FEB, P91

[8]

OEDER R, 1983, DEFECTS SEMICONDUCTO, V2, P171

[9] SPECTROSCOPIC STUDIES OF 450-DEGREES-C THERMAL DONORS IN SILICON [J].

PAJOT, B ;

COMPAIN, H ;

LEROUILLE, J ;

CLERJAUD, B .

PHYSICA B & C, 1983, 117 (MAR) :110-112

[10]

PATEL JR, 1981, SEMICONDUCTOR SILICO, P189

← 1 2 →