ACTIVATION-ENERGY FOR THERMAL DONOR FORMATION IN SILICON

被引:47
作者
CLAYBOURN, M
NEWMAN, RC
机构
关键词
D O I
10.1063/1.98938
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2197 / 2199
页数:3
相关论文
共 20 条
  • [1] On the kinetics of thermal donor formation in silicon
    Borenstein, Jeffrey T.
    Peak, David
    Corbett, James W.
    [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (04) : 527 - 536
  • [2] DEPLETION OF INTERSTITIAL OXYGEN IN SILICON AND THE THERMAL DONOR MODEL
    BORENSTEIN, JT
    SINGH, VA
    CORBETT, JW
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1287 - 1289
  • [3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
    GOSELE, U
    TAN, TY
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92
  • [4] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
    KAISER, W
    FRISCH, HL
    REISS, H
    [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554
  • [5] KIMERLING LC, 1986, MATER RES SOC S P, V59, P83
  • [6] ELECTRICAL AND OPTICAL CHARACTERIZATION OF THERMAL DONORS IN SILICON
    LATUSHKO, YI
    MAKARENKO, LF
    MARKEVICH, VP
    MURIN, LI
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K181 - K184
  • [7] SOME NEW FEATURES OF THERMAL DONOR FORMATION IN SILICON AT T-LESS-THAN-800-K
    MARKEVICH, VP
    MAKARENKO, LF
    MURIN, LI
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02): : K173 - K176
  • [8] Mikkelsen J C, 1985, MATER RES SOC S P, V59, P19
  • [9] THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES
    NEWMAN, RC
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30): : L967 - L972
  • [10] THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES
    NEWMAN, RC
    TIPPING, AK
    TUCKER, JH
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (27): : L861 - L866