THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES

被引：23

作者：

NEWMAN, RC

TIPPING, AK

TUCKER, JH

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 27期

关键词：

D O I：

10.1088/0022-3719/18/27/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：L861 / L866

页数：6

相关论文

共 19 条

[1] A CORRELATION BETWEEN THE ELECTRICAL BREAKDOWN OF SILICON BIPOLAR-TRANSISTORS AND IMPURITY PRECIPITATES
AUGUSTUS, PD
KNIGHTS, J
KENNEDY, LW
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 315 - 320
[2] THE OXYGEN RELATED DONOR EFFECT IN SILICON
BENTON, JL
KIMERLING, LC
STAVOLA, M
[J]. PHYSICA B & C, 1983, 116 (1-3): : 271 - 275
[3] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS
CAPPER, P
JONES, AW
WALLHOUSE, EJ
WILKES, JG
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1646 - 1655
[4] COOLING RATES OF LARGE-DIAMETER SILICON-CRYSTALS
CAPPER, P
WILKES, JG
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 187 - 189
[5] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &
[6] STRESS-INDUCED ALIGNMENT OF ANISOTROPIC DEFECTS IN CRYSTALS
CORBETT, JW
WATKINS, GD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 319 - 320
[7] CORBETT JW, 1985, 13TH P INT C DEF SEM, P3
[8] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM
HAAS, C
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111
[9] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON
KAISER, W
[J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756
[10] AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
LIVINGSTON, FM
MESSOLORAS, S
NEWMAN, RC
PIKE, BC
STEWART, RJ
BINNS, MJ
BROWN, WP
WILKES, JG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34): : 6253 - 6276