DEPLETION OF INTERSTITIAL OXYGEN IN SILICON AND THE THERMAL DONOR MODEL

[1] Banerjee K., UNPUB

[2] PERTURBATION MODEL FOR THE THERMAL-DONOR ENERGY-SPECTRUM IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (16): : 2893 - 2906

[3] BORENSTEIN JT, IN PRESS J MATER RES

[4] BORENSTEIN JT, 1986, OXYGEN CARBON HYDROG

[5] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[6] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[7] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92

[8] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[9] KIMERLING LC, 1986, OXYGEN CARBON HYDROG

[10] THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30): : L967 - L972

[1] Banerjee K., UNPUB

[2] PERTURBATION MODEL FOR THE THERMAL-DONOR ENERGY-SPECTRUM IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (16): : 2893 - 2906

[3] BORENSTEIN JT, IN PRESS J MATER RES

[4] BORENSTEIN JT, 1986, OXYGEN CARBON HYDROG

[5] Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[6] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[7] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92

[8] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[9] KIMERLING LC, 1986, OXYGEN CARBON HYDROG

[10] THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30): : L967 - L972