Controlled selective growth of ZnO nanorod arrays and their field emission properties

被引：99

作者：

Ahsanulhaq, Q.

Kim, Jin-Hwan

Hahn, Yoon-Bong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Ctr Future Energy Mat & Devices BK21, Jeonju 561756, South Korea

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 48期

关键词：

D O I：

10.1088/0957-4484/18/48/485307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlled, ordered arrays of ZnO nanorods having a high aspect ratio of similar to 30: 1 and diameter of similar to 50 nm were fabricated on silicon substrates by combining electron-beam lithography and simple solution growth techniques. This top-down and bottom-up hybrid approach resulted in excellent control of periodicity, location, and density of ZnO nanorod arrays on silicon substrates. The field emission measurements from the as-grown ZnO nanorod arrays showed a low turn-on field of similar to 2.85 V mu m(-1) and a high field-enhancement factor (beta) of similar to 1.68 x 10(3).

引用

页数：6

共 41 条

[1]

Ahsanulhaq Q., 2007, NANOTECHNOLOGY, V18

[2] Low-temperature growth and field emission of ZnO nanowire arrays -: art. no. 044315 [J].