Microwave CMOS - Device physics and design

被引：127

作者：

Manku, T ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Ctr Wireless Commun, RF Technol Grp, Waterloo, ON N2L 3G1, Canada

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 03期

关键词：

CMOS; microwave CMOS; radio frequency; RF MOSFET design;

D O I：

10.1109/4.748178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses design issues and the microwave properties of CMOS devices. A qualitative understanding of the microwave characteristics of MOS transistors is provided. The paper is directed toward helping analog IC circuit designers create better front-end radio-frequency CMOS circuits. The network properties of CMOS devices, the frequency response, and the microwave noise properties are reviewed, and a summary of the microwave scaling rules are presented.

引用

收藏

页码：277 / 285

页数：9

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