Metastable phase of Si(110) surface: 5 x 8 reconstruction

被引：10

作者：

Ohira, Yutaka ^{[1
]}

Yoshimura, Masamichi ^{[1
]}

Ueda, Kazuyuki ^{[1
]}

机构：

[1] Toyota Technol Inst, Nano Hightech Res Ctr, Grad Sch Engn, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 8B期

关键词：

Si(110); STM; LEED; reconstruction; metastable phase; SCANNING-TUNNELING-MICROSCOPY; CLEAN GE(110) SURFACE; SILICON; GERMANIUM; RHEED; TRANSITIONS; NICKEL; 16X2; LEED;

D O I：

10.1143/JJAP.46.5652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new type of surface phase in Si(I 10) has been discovered and analyzed by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). When the Si(110) surface is flashed at 1200 degrees C followed by annealing at 330 degrees C for 1 h, a superstructure with two equivalent domains forms. From STM and LEED analysis, the structure is revealed to be a 5 x 8, superstructure. On the basis of high-resolution STM images, a possible structural model of the 5 x 8 structure is proposed. Moreover, since this structure eventually returns to the clean "16 x 2" structure by prolonged annealing at. the same temperature, the 5 x 8 structure is believed to be a metastable phase of a clean Si(110) surface.

引用

页码：5652 / 5654

页数：3

共 22 条

[1] Rearrangement of up-and-down terrace in Si(110) "16x2" induced by Sn adsorption [J].

An, T ;

Yoshimura, M ;

Ueda, K .

SURFACE SCIENCE, 2005, 576 (1-3) :165-174

[2] Elemental structure in Si(110)-"16x2" revealed by scanning tunneling microscopy [J].

An, T ;

Yoshimura, M ;

Ono, I ;

Ueda, K .

PHYSICAL REVIEW B, 2000, 61 (04) :3006-3011

[3] TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1 [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :472-477

[4] The structure of clean and SiGe-covered Si(110) surfaces [J].

Butz, R ;

Luth, H .

SURFACE SCIENCE, 1996, 365 (03) :807-816

[5] THE INITIAL-STAGES OF NISI2 EPITAXY ON CLEAN SI(111), SI(100) AND SI(110) SURFACES [J].

DOLBAK, AE ;

OLSHANETSKY, BZ ;

STENIN, SI ;

TEYS, SA ;

GAVRILOVA, TA .

SURFACE SCIENCE, 1991, 247 (01) :32-42

[6] EFFECT OF NICKEL ON CLEAN SILICON SURFACES - TRANSPORT AND STRUCTURE [J].

DOLBAK, AE ;

OLSHANETSKY, BZ ;

STENIN, SI ;

TEYS, SA ;

GAVRILOVA, TA .

SURFACE SCIENCE, 1989, 218 (01) :37-54

[7] Atomic structure of the Ge(101) surface [J].

Gai, Z ;

Zhao, RG ;

Yang, WS .

PHYSICAL REVIEW B, 1998, 57 (12) :R6795-R6798

[8] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].

HAGSTRUM, HD ;

BECKER, GE .

PHYSICAL REVIEW B, 1973, 8 (04) :1580-1591

[9] GE(110) SURFACE RECONSTRUCTION OBSERVED WITH SCANNING-TUNNELING-MICROSCOPY [J].

ICHIKAWA, T ;

SUEYOSI, T ;

SATO, T ;

IWATSUKI, M ;

UDAGAWA, F ;

SUMITA, I .

SOLID STATE COMMUNICATIONS, 1995, 93 (06) :541-545

[10] Atomic geometry of the Ge(110)c(8 x 10) structure [J].

Ichikawa, T .

SURFACE SCIENCE, 2004, 560 (1-3) :205-212

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