2-μm GaInSb-AlGaAsSb distributed-feedback lasers

被引：43

作者：

Bleuel, T ^{[1
]}

Müller, M ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 06期

关键词：

CO2; distributed-feedback (DFB) lasers; gas sensing; InGaSb; semiconductor lasers;

D O I：

10.1109/68.924017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature continuous-wave operation of 2-mum single-mode InGaSb-AlGaAsSb distributed-feedback (DFS) lasers has been realized. The laser structure has been grown by solid source molecular beam epitaxy (MBE). Single-mode DFB emission is obtained by first-order Cr-Bragg gratings on both sides of the laser ridge, For a cavity with 900 mum length and 4 mum width, the threshold currents are around 20 mA and the continuous-wave output power is 10 mW at a drive current of 200 mA at 20 OC. Monomode emission with sidemode suppression ratios of 31 dB has been obtained.

引用

收藏

页码：553 / 555

页数：3

相关论文

共 8 条

[1] HIGH-POWER MULTIPLE-QUANTUM-WELL GAINASSB/ALGAASSB DIODE-LASERS EMITTING AT 2.1 MU-M WITH LOW THRESHOLD CURRENT-DENSITY [J].

CHOI, HK ;

EGLASH, SJ .

APPLIED PHYSICS LETTERS, 1992, 61 (10) :1154-1156

[2] Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers [J].

Kamp, M ;

Hofmann, J ;

Forchel, A ;

Schäfer, F ;

Reithmaier, JP .

APPLIED PHYSICS LETTERS, 1999, 74 (04) :483-485

[3] 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power [J].

Mitsuhara, M ;

Ogasawara, M ;

Oishi, M ;

Sugiura, H ;

Kasaya, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) :33-35

[4] 2.0-mu m single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers [J].

Oishi, M ;

Yamamoto, M ;

Kasaya, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (04) :431-433

[5] Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGeAsSb lasers emitting at 2.05 μm [J].

Turner, GW ;

Choi, HK ;

Manfra, MJ .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :876-878

[6] Hydrogen chloride gas monitoring at 1.74 μm with InGaAs/InGaAsP strained quantum well laser [J].

Ubukata, A ;

Dong, J ;

Masusaki, H ;

Satoh, T ;

Matsumoto, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A) :2521-2523

[7] A review of recent advances in semiconductor laser based gas monitors [J].

Werle, P .

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1998, 54 (02) :197-236

[8] InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 μm [J].

Werner, R ;

Bleuel, T ;

Hofmann, J ;

Brockhaus, M ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (08) :966-968