Body effect induced wear-out acceleration in ultra-thin oxides

被引：4

作者：

Bruyère, S

Roy, D

Robilliart, E

Vincent, E

Ghibaudo, G

机构：

[1] ST Microelect, Cent R&D Labs, F-38926 Crolles, France

[2] CNRS, UMR 5531, ENSERG, LPCS, F-38016 Grenoble, France

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 07期

关键词：

D O I：

10.1016/S0026-2714(01)00065-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, body effect influence on oxide degradation is analyzed. It is found that the negative bias polarization on the n-well of a p-channel MOS transistor may induce a significant reduction of the oxide lifetime as well as an increase of stress-induced leakage current (SILC), Such a result is demonstrated to confirm the key role of hot holes on SILC and breakdown phenomena. Moreover, even if the hot hole generated at the anode are probably at the origin of SILC and can be interpreted as a catalyst of breakdown, it is undoubtedly shown that both phenomena are not directly correlated: SILC at breakdown can not be ascribed to a critical density of defect at failure. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1031 / 1034

页数：4

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