SrTiO3 films epitaxially grown by eclipse pulsed laser deposition and their electrical characterization

被引：41

作者：

Tachiki, M ^{[1
]}

Noda, M ^{[1
]}

Yamada, K ^{[1
]}

Kobayashi, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Div Adv Elect & Opt Sci, Toyonaka, Osaka 5608531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.367363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial (100)SrTiO3 (STO) thin films were grown successfully on (100)La0.7Sr0.3MnO3/(100)MgO substrates by eclipse pulsed laser deposition in (O-2+Ar) ambient gas. The droplet-free STO films showed marked improvement in their permittivity, 320 epsilon(0) at room temperature. Time-resolved plume observation and spectrum measurement suggested that the improvement was due to effective excitation and ionization of growth species in the plume with the aid of coexisting Ar. The STO films also showed nonlinear permittivity against the applied field, as commonly observed in single-crystal bulk STO. Using this nonlinear characteristic and hole injection into the STO valence band, we deduced the hole trap concentration in the STO films. The concentration was on the order of 10(18)cm(-3). (C) 1998 American Institute of Physics.

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页码：5351 / 5357

页数：7

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