Ferroelectric properties of Al and Nb doped PbTiO3 thin films prepared by chemical solution deposition process

Thin films of pure and acceptor (Al) as well as donor (Nb) doped PbTiO3 were prepared using a chemical solution deposition method. The nominal compositions of the solutions were equivalent to those of PbTiO3, Pb(Ti0.95Al0.05)O-3 and Pb(Ti0.95Nb0.05)O-3, respectively. In the case of PbTiO3, the remanent polarization amounted to 43 muC/cm(2), but the shape of the hysteresis curve was round. On the other hand, Al and Nb doped PbTiO3 thin films exhibited well-saturated P-Ehysteresis curves. The shape of these curves was slim compared to that of PbTiO3. The remanent polarization of the PbiTi(0.95)Al(0.05))O-3 and Pb(Ti0.95Al0.05)O-3 thin films amounted to 18 and 15 muC/cm(2). respectively, and the coercive field decreased in comparison with that of PbTiO3. The leakage currents of the PbTiO3, Pb(Ti0.95Al0.05)O-3 and Pb(Ti0.95Al0.05)O-3 thin films were 7.68x10(-3), 3.21x10(-6) and 6.58x10(-4) A/cm(2), respectively, at +10V.