A nitrogen dioxide sensor based on an organic transistor constructed from amorphous semiconducting polymers

被引：157

作者：

Das, Arindam

Dost, Rene

Richardson, Tim

Grell, Martin

Morrison, John J.

Turner, Michael L.

机构：

[1] Univ Sheffield, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/adma.200701504

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic field effect transistors based on amorphous semiconducting polymers are used as highly effective sensors for the detection of low concentrations of NO2. The figure shows the experimental setup used to detect the toxic odor. The threshold voltage rather than the charge carrier mobility is seen to be greatly modified by exposure to NO2.

引用

收藏

页码：4018 / +

页数：7

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