Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

被引：48

作者：

Ma, WQ ^{[1
]}

Nötzel, R ^{[1
]}

Trampert, A ^{[1
]}

Ramsteiner, M ^{[1
]}

Zhu, HJ ^{[1
]}

Schönherr, HP ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1352047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements. (C) 2001 American Institute of Physics.

引用

页码：1297 / 1299

页数：3

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