Microstructural evolution during film growth

被引:1508
作者
Petrov, I [1 ]
Barna, PB
Hultman, L
Greene, JE
机构
[1] Univ Illinois, Frederick Seit Mat Res Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[3] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1325 Budapest, Hungary
[4] Linkoping Univ, Dept Phys, Div Thin Film, S-58183 Linkoping, Sweden
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2003年 / 21卷 / 05期
关键词
D O I
10.1116/1.1601610
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomic-scale control and manipulation of the microstructure of polycrystalline thin films during kinetically limited low-temperature deposition, crucial for a broad range of industrial applications, has been a leading goal of materials science during the past decades. Here, we review the present understanding of film growth processes-nucleation, coalescence, competitive grain growth, and recrystallization-and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth. (C) 2003 American Vacuum Society.
引用
收藏
页码:S117 / S128
页数:12
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