Optimal control of rapid thermal annealing in a semiconductor process

被引：23

作者：

Gunawan, R ^{[1
]}

Jung, MYL ^{[1
]}

Seebauer, EG ^{[1
]}

Braatz, RD ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF PROCESS CONTROL | 2004年 / 14卷 / 04期

关键词：

optimal control; batch control; uncertainty analysis; robustness analysis; microelectronics processes; semiconductor processing; rapid thermal annealing;

D O I：

10.1016/j.jprocont.2003.07.005

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study focuses on the optimal control of rapid thermal annealing (RTA) used in the formation of ultrashallow junctions needed in next-generation microelectronic devices. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control implementations for these processes. This is the first time that the effects of model uncertainties and control implementation inaccuracies are rigorously quantified for RTA. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：423 / 430

页数：8

共 47 条

[21] Shallow junction doping technologies for ULSI [J].

Jones, EC ;

Ishida, E .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 24 (1-2) :1-80

[22]

JUNG MYL, 2001, MAT RES SOC SPRING M

[23]

JUNG MYL, 2000, P RAP THERM OTH SH 2, P15

[24]

JUNG MYL, UNPUB J ELECTROCHEMI

[25]

KOBAYASHI H, 2001, SI FRONT END PROCESS

[26]

Laidler KJ., 1987, CHEM KINETICS

[27] Continuum based modeling of silicon integrated circuit processing: An object oriented approach [J].

Law, ME ;

Cea, SM .

COMPUTATIONAL MATERIALS SCIENCE, 1998, 12 (04) :289-308

[28] Worst-case analysis of finite-time control policies [J].

Ma, DL ;

Braatz, RD .

IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY, 2001, 9 (05) :766-774

[29] Worst-case performance analysis of optimal batch control trajectories [J].

Ma, DL ;

Chung, SH ;

Braatz, RD .

AICHE JOURNAL, 1999, 45 (07) :1469-1476

[30] Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon [J].

Mannino, G ;

Stolk, PA ;

Cowern, NEB ;

de Boer, WB ;

Dirks, AG ;

Roozeboom, F ;

van Berkum, JGM ;

Woerlee, PH ;

Toan, NN .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :889-891

← 1 2 3 4 5 →