Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate

被引：44

作者：

Fujimoto, Y ^{[1
]}

Yonezu, H ^{[1
]}

Utsumi, A ^{[1
]}

Momose, K ^{[1
]}

Furukawa, Y ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Aichi 4418580, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.1395519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that a lattice-matched and dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well (QW) structure can be grown on a Si substrate. A two-dimensional growth mode was maintained during growth of all the layers. It was confirmed that the QW structure was lattice-matched to the Si substrate from the lattice constant measured by x-ray diffraction. A cross-sectional image taken by transmission electron microscopy revealed that no threading dislocations or misfit dislocations were observed at the QW structure. (C) 2001 American Institute of Physics.

引用

页码：1306 / 1308

页数：3

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