High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations

被引:6
作者
Fujimoto, Y [1 ]
Yonezu, H [1 ]
Irino, S [1 ]
Samonji, K [1 ]
Momose, K [1 ]
Ohshima, N [1 ]
机构
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 12A期
关键词
quantum well; lattice mismatch; threading dislocation; heterointerface; misfit dislocation;
D O I
10.1143/JJAP.38.6645
中图分类号
O59 [应用物理学];
学科分类号
摘要
We proposed a novel quantum well (QW) structure of GaAsxP1-x/In0.13Ga0.87P grown on a GaP/Si substrate with a small lattice mismatch (1.4%) to the Si substrate, for a highly reliable laser diode (LD) on a Si substrate. and attempted to form the structure with a GaAs0.68P0.32 well and GaAs0.27P0.73 guiding layers. A two-dimensional (2D) growth mode was maintained during the growth of all layers. A cross-sectional image taken by transmission electron microscopy (TEM) revealed that the density of threading dislocations is the lowest in light-emitting device structures grown on Si substrates, as far as we know. The lattice mismatch of 1.4% was accommodated at the In0.13Ga0.87P-GaP and the GaP-Si heterointerfaces by introducing misfit dislocations. The quality and structural profile of GaAsxP1-x epilayers was improved by varying the As-4 flux in a short period. As a result, strong band-edge emission was observed from the GaAs0.68P0.32 QW at room temperature (RT). It was also found by secondary-ion mass spectroscopy (SIMS) that relatively abrupt heterointerfaces were formed in the QW structure of GaAs0.68P0.32/GaAs0.27P0.73/In0.13Ga0.87P.
引用
收藏
页码:6645 / 6649
页数:5
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