OBSERVATION OF THREADING DISLOCATION GENERATION PROCESS IN HIGHLY LATTICE-MISMATCHED HETEROEPITAXY

被引：18

作者：

KAWAI, T ^{[1
]}

YONEZU, H ^{[1
]}

SAITO, D ^{[1
]}

YOKOZEKI, M ^{[1
]}

PAK, K ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI 441,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 12B期

关键词：

RHEED; TEM; THREADING DISLOCATION; MISFIT DISLOCATION; 3-DIMENSIONAL ISLAND;

D O I：

10.1143/JJAP.33.L1740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The generation process of threading dislocations in highly lattice-mismatched heteroepitaxy was investigated by transmission electron microscopy (TEM). In the growth of InAs epilayers on GaAs substrate, the misfit strain was partially accommodated by the formation of coherent three-dimensional islands before the generation of misfit dislocations. However, the misfit dislocation was eventually introduced in each grown three-dimensional island in order to relieve the misfit strain. It was clearly shown that the misfit dislocations propagate towards the growth directions; i.e., threading dislocations originated from the grown islands.

引用

页码：L1740 / L1743

页数：4

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