SOLID-PHASE EPITAXIAL-GROWTH OF INP ON GAAS

被引：3

作者：

MARUYAMA, H

PAK, K

SAKAKIBARA, K

NAKAMURA, M

TAKANO, Y

YONEZU, H

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441, Tempaku-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

712 Electronic and Thermionic Materials - 714 Electronic Components and Tubes - 931 Classical Physics; Quantum Theory; Relativity - 933 Solid State Physics;

D O I：

10.1016/0022-0248(91)90735-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Solid phase epitaxial (SPE) growth of amorphous InP on GaAs was investigated by molecular beam epitaxy. Amorphous InP was obtained at room temperature with a high incident beam flux ratio of P2 to In. The SPE layers show a flat surface without the formation of islands. The subsequent InP epitaxial growth on SPE layers was obtained successfully in a two-dimensional growth mode without island formation.

引用

页码：180 / 185

页数：6

共 7 条

[1] SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI SUBSTRATES [J].

CHO, KI ;

CHOO, WK ;

PARK, SC ;

NISHINAGA, T ;

LEE, BT .

APPLIED PHYSICS LETTERS, 1990, 56 (05) :448-450

[2] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J].

DENTAI, AG ;

JOYNER, CH ;

TELL, B ;

ZYSKIND, JL ;

SULHOFF, JW ;

FERGUSON, JF ;

CENTANNI, JC ;

CHU, SNG ;

CHENG, CL .

ELECTRONICS LETTERS, 1986, 22 (22) :1186-1188

[3]

Stowell M.J., 1975, EPITAXIAL GROWTH B, P444

[4] SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI(111) [J].

TAKANO, Y ;

KANAYA, Y ;

KAWAI, T ;

TORIHATA, T ;

PAK, K ;

YONEZU, H .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1664-1666

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE [J].

TSUJI, M ;

TAKANO, Y ;

TORIHATA, T ;

KANAYA, Y ;

PAK, K ;

YONEZU, H .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :405-409

[6]

UEN WY, 1991, 4TH P TP M CRYST GRO, P91

[7] SOLID-PHASE CRYSTAL-GROWTH OF MOLECULAR-BEAM-DEPOSITED AMORPHOUS GAAS [J].

YOKOYAMA, S ;

YUI, D ;

TANIGAWA, H ;

TAKASUGI, H ;

KAWABE, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1808-1814

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