MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE

被引：11

作者：

TSUJI, M

TAKANO, Y

TORIHATA, T

KANAYA, Y

PAK, K

YONEZU, H

机构：

[1] Toyohashi Univ of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

Molecular Beam Epitaxy - Optoelectronic Devices - Silicon and Alloys - X-Rays--Diffraction;

D O I：

10.1016/0022-0248(89)90430-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The crystalline quality was investigated, relating to the initial growth process in the 4% lattice mismatched system of GaAs on GaP. A high quality GaAs epilayer was obtained under optimum conditions of As4/Ga beam flux ratio. The results were compared with those of GaAs/Si(100) and GaAs/Si(111). It was clarified that two-dimensional growth, realized under the optimum conditions, leads to high crystalline quality in terms of surface morphology, etch pit density and FWHM value of double crystal X-ray diffraction.

引用

页码：405 / 409

页数：5

共 19 条

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