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- [3] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 213 - 222DUPUIS, RD
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- [7] SCHOTTKY-BARRIER RESTRICTED ALGAAS LASER WITH AN ETCHED MESA OHMIC CONTACT[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) : 1969 - 1971REYNOLDS, CLHOLBROOK, WRNYGREN, SFSHIMER, JALOGAN, RATEMKIN, H
- [8] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 413 - 414SAKAI, SSOGA, TTAKEYASU, MUMENO, M
- [9] SCHOTTKY-BARRIER RESTRICTED GAALAS LASER[J]. ELECTRONICS LETTERS, 1982, 18 (16) : 701 - 703TEMKIN, HCHIN, AKDUTT, BV
- [10] LOW THRESHOLD, OPTICALLY PUMPED, ROOM-TEMPERATURE LASER OSCILLATION AT 0.88 MU-M FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON GE-COATED SI SUBSTRATES[J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1713 - 1715VANDERZIEL, JPDUPUIS, RDBEAN, JC