SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI(111)

被引：11

作者：

TAKANO, Y

KANAYA, Y

KAWAI, T

TORIHATA, T

PAK, K

YONEZU, H

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 440, Tempaku-cho

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A continuous GaAs film was successfully grown on Si(111) at the initial stage (20 Å growth thickness) by solid phase epitaxial growth. This growth suppressed the island formation observed with direct growth of GaAs on Si. The GaAs(111)A was obtained for the first time on Si(111) with an As prelayer deposited at 20 °C and 350 °C. The GaAs(111)B was also grown on Si(111) with an As prelayer deposited at 580 °C and 700 °C. The polarity of the (111) GaAs epitaxial film depends on the substrate temperature at which the As prelayer is deposited on Si.

引用

页码：1664 / 1666

页数：3

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