SOLID-PHASE EPITAXY OF MOLECULAR-BEAM DEPOSITED AMORPHOUS GAAS ON SI

被引：6

作者：

YOSHINO, K

MURAKAMI, K

YOKOYAMA, S

MASUDA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期

关键词：

D O I：

10.1063/1.101050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2562 / 2564

页数：3

共 11 条

[1]

AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2]

CSEPREGI L, 1975, PHYS LETT A, V54, P154

[3] MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100) [J].

KAWABE, M ;

UEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L285-L287

[4] DIRECT MEASUREMENT OF SOLID-PHASE EPITAXIAL-GROWTH KINETICS IN GAAS BY TIME-RESOLVED REFLECTIVITY [J].

LICOPPE, C ;

NISSIM, YI ;

MERIADEC, C .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3094-3096

[5] TIME-RESOLVED AND SPACE-RESOLVED SI LATTICE-TEMPERATURE MEASUREMENTS DURING CW LASER ANNEALING OF SI ON SAPPHIRE [J].

MURAKAMI, K ;

TOHMIYA, Y ;

TAKITA, K ;

MASUDA, K .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :659-661

[6]

OLSON G, 1984, P MRS S ENERGY BEAM, P375

[7]

TAKAHASI K, 1987, 18TH P S ION IMPL SU, P33

[8] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY [J].

TAKASUGI, H ;

KAWABE, M ;

BANDO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05) :L584-L586

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[10] SOLID-PHASE CRYSTAL-GROWTH OF MOLECULAR-BEAM-DEPOSITED AMORPHOUS GAAS [J].

YOKOYAMA, S ;

YUI, D ;

TANIGAWA, H ;

TAKASUGI, H ;

KAWABE, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1808-1814

← 1 2 →