TIME-RESOLVED AND SPACE-RESOLVED SI LATTICE-TEMPERATURE MEASUREMENTS DURING CW LASER ANNEALING OF SI ON SAPPHIRE

被引:17
作者
MURAKAMI, K
TOHMIYA, Y
TAKITA, K
MASUDA, K
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10.1063/1.95347
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O59 [应用物理学];
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页码:659 / 661
页数:3
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共 6 条
[1]   RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON [J].
LO, HW ;
COMPAAN, A .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1565-1568
[2]   MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED-LASER ANNEALING BY TIME-DEPENDENT OPTICAL REFLECTIVITY [J].
MURAKAMI, K ;
TAKITA, K ;
MASUDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :L867-L870
[3]   TIME-RESOLVED OPTICAL MEASUREMENT OF SI LATTICE TEMPERATURE DURING NANOSECOND PULSED LASER ANNEALING [J].
MURAKAMI, K ;
ITOH, H ;
TAKITA, K ;
MASUDA, K .
PHYSICA B & C, 1983, 117 (MAR) :1024-1026
[4]  
MURAKAMI K, 1983, UNPUB P MRS S ENERGY
[5]   DIRECT OBSERVATION OF LASER-INDUCED SOLID-PHASE EPITAXIAL CRYSTALLIZATION BY TIME-RESOLVED OPTICAL REFLECTIVITY [J].
OLSON, GL ;
KOKOROWSKI, SA ;
MCFARLANE, RA ;
HESS, LD .
APPLIED PHYSICS LETTERS, 1980, 37 (11) :1019-1021