RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON

被引：62

作者：

LO, HW

COMPAAN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.327809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1565 / 1568

页数：4

共 15 条

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[3] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[4] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SIMONS, AL ;

SURKO, CM ;

VENKATESAN, TNC .

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[5]

COMPAAN A, 1975, LIGHT SCATTERING SOL, P39

[6] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[7] TEMPERATURE DEPENDENCE OF RAMAN SCATTERING IN SILICON [J].

HART, TR ;

AGGARWAL, RL ;

LAX, B .

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[8]

Ho C. Y., 1974, J PHYS CHEM REF D S1, V3, P1

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[10] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

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