TIME-RESOLVED OPTICAL MEASUREMENT OF SI LATTICE TEMPERATURE DURING NANOSECOND PULSED LASER ANNEALING

被引：4

作者：

MURAKAMI, K

ITOH, H

TAKITA, K

MASUDA, K

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90726-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1024 / 1026

页数：3

相关论文

共 11 条

[1] BLOEMBERGEN N, 1981, P MRS C LASER ELECTR
[2] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
HOPPER, MA
CLARKE, RA
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222
[3] SYNCHROTRON X-RAY-DIFFRACTION STUDY OF SILICON DURING PULSED-LASER ANNEALING
LARSON, BC
WHITE, CW
NOGGLE, TS
MILLS, D
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (05) : 337 - 340
[4] RAMAN MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1604 - 1607
[5] DYNAMIC BEHAVIOR OF PULSED-LASER ANNEALING IN ION-IMPLANTED SILICON - MEASUREMENT OF THE TIME-DEPENDENT OPTICAL REFLECTANCE
MURAKAMI, K
KAWABE, M
GAMO, K
NAMBA, S
AOYAGI, Y
[J]. PHYSICS LETTERS A, 1979, 70 (04) : 332 - 334
[6] MEASUREMENT OF LATTICE TEMPERATURE DURING PULSED-LASER ANNEALING BY TIME-DEPENDENT OPTICAL REFLECTIVITY
MURAKAMI, K
TAKITA, K
MASUDA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L867 - L870
[7] MURAKAMI K, UNPUB SEMICONDUCTOR
[8] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING
STRITZKER, B
POSPIESZCZYK, A
TAGLE, JA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (05) : 356 - 358
[9] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING
VANVECHTEN, JA
TSU, R
SARIS, FW
[J]. PHYSICS LETTERS A, 1979, 74 (06) : 422 - 426
[10] VANVECHTEN JA, 1982, JPN J APPL PHYS 2, V21, pL125, DOI 10.1143/JJAP.21.L125