PYROMETRIC MEASUREMENT OF TEMPERATURE DURING CW ARGONION LASER ANNEALING AND THE SOLID-STATE REGROWTH RATE OF AMORPHOUS SI

被引：12

作者：

SEDGWICK, TO

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来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

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D O I：

10.1063/1.92703

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：254 / 256

页数：3

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[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON
AUSTON, DH
GOLOVCHENKO, JA
SMITH, PR
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541
[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
[3] GAT A, 1979, J APPL PHYS, V50, P2929
[4] LAX M, 1979, LASER SOLID INTERACT, P149
[5] RAMAN MEASUREMENTS OF TEMPERATURE DURING CW LASER-HEATING OF SILICON
LO, HW
COMPAAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1565 - 1568
[6] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION
WILLIAMS, JS
BROWN, WL
LEAMY, HJ
POATE, JM
RODGERS, JW
ROUSSEAU, D
ROZGONYI, GA
SHELNUTT, JA
SHENG, TT
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544