DIRECT OBSERVATION OF LASER-INDUCED SOLID-PHASE EPITAXIAL CRYSTALLIZATION BY TIME-RESOLVED OPTICAL REFLECTIVITY

[1] TECHNIQUE FOR FAST MEASUREMENT OF GAUSSIAN LASER BEAM PARAMETERS [J]. APPLIED OPTICS, 1971, 10 (12) : 2775 - +

[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2926 - 2929

[7] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[8] Hess L. D., 1979, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V198, P31

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 786 - 788

[10] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466

[1] TECHNIQUE FOR FAST MEASUREMENT OF GAUSSIAN LASER BEAM PARAMETERS [J]. APPLIED OPTICS, 1971, 10 (12) : 2775 - +

[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2926 - 2929

[7] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278

[8] Hess L. D., 1979, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V198, P31

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 786 - 788

[10] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466