SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI SUBSTRATES

被引:4
作者
CHO, KI
CHOO, WK
PARK, SC
NISHINAGA, T
LEE, BT
机构
[1] ELECTR & TELECOMMUN RES INST,TAEJON,SOUTH KOREA
[2] UNIV TOKYO,TOKYO 113,JAPAN
[3] CHONNAM NATL UNIV,KWANGJU,SOUTH KOREA
关键词
D O I
10.1063/1.102761
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8-μm-thick GaAs film. Cross-sectional transmission electron micrographs and reflection high-energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
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页码:448 / 450
页数:3
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