TWIN FORMATION AND AU SEGREGATION DURING ION-BEAM-INDUCED EPITAXY OF AMORPHOUS SI

被引：14

作者：

PRIOLO, F

BATSTONE, JL

POATE, JM

LINNROS, J

JACOBSON, DC

THOMPSON, MO

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] CORNELL UNIV,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期

关键词：

D O I：

10.1063/1.99204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1043 / 1045

页数：3

共 13 条

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[4] ION-BEAM-INDUCED EPITAXY AND INTERFACIAL SEGREGATION OF AU IN AMORPHOUS-SILICON [J].

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[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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SIGMON, TW .

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[8] ORIENTATION AND DOPING EFFECTS IN ION-BEAM ANNEALING OF ALPHA-SILICON [J].

LAFERLA, A ;

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FERLA, G ;

CAMPISANO, SU ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :470-474

[9] PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION [J].

LINNROS, J ;

HOLMEN, G ;

SVENSSON, B .

PHYSICAL REVIEW B, 1985, 32 (05) :2770-2777

[10]

MAHER DM, 1987, MATER RES SOC S P, V93, P87

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