SUPPRESSION OF THREADING DISLOCATION GENERATION IN HIGHLY LATTICE-MISMATCHED HETEROEPITAXIES BY STRAINED SHORT-PERIOD SUPERLATTICES

被引：21

作者：

KAWAI, T

YONEZU, H

OGASAWARA, Y

SAITO, D

PAK, K

机构：

[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Tempaku-cho

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threading dislocation density was remarkably reduced in highly lattice mismatched heteroepitaxies of the In0.5Ga0.5As/GaAs(001) and GaAs/GaP(001) systems. The two-dimensional growth mode was obtained even after the lattice relaxation by applying the strained short-period superlattices. The misfit dislocations aligned along the [110] direction were mainly generated at heterointerfaces. The misfit strain was relieved by the generation of the misfit dislocations in the absence of three-dimensional island growth. It was found that the generation of threading dislocations is effectively suppressed by introducing strained short-period superlattices at the initial growth stage of highly lattice mismatched heteroepitaxies.

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页码：2067 / 2069

页数：3

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