MIGRATION ENHANCED EPITAXY GROWTH OF GAAS ON SI WITH (GAAS)1-X(SI2)X/GAAS STRAINED LAYER SUPERLATTICE BUFFER LAYERS

被引:20
作者
RAO, TS [1 ]
NOZAWA, K [1 ]
HORIKOSHI, Y [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, TOKYO 180, JAPAN
关键词
D O I
10.1063/1.109355
中图分类号
O59 [应用物理学];
学科分类号
摘要
(GaAs)1-x(Si2)x/GaAs strained-layer superlattices (SLS) have been used as buffer layers to reduce the dislocation density in GaAs grown on Si by migration enhanced epitaxy (MEE). Double-crystal x-ray diffractograms of GaAs on Si grown using MEE with 3 packets of 5 period (GaAs)1-x(Si2)x/GaAs SLS buffer layers, exhibited a GaAs (004) peak full width at half maximum value of 150 arcsecs. The cross-sectional transmission electron microscopy investigations revealed extensive threading dislocation bending at each interface of (GaAs)1-x(Si2)x and GaAs, making the SLS highly efficient. The observed highly effective dislocation bending, we believe is due to a combined effect of built-in strain in the SLS and the relatively high elastic stiffness constant of (GaAs)1-x(S2)x alloys. Plan-view transmission electron microscopy studies indicated dislocation densities < 5 X 10(5) cm-2 at a distance of 0.2 mum from the surface of GaAs on Si.
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页码:154 / 156
页数:3
相关论文
共 17 条
[1]   CONTROL OF DEFECTS IN THE HETEROEPITAXIAL GROWTH OF GAAS ON SILICON [J].
BRADLEY, RR ;
BESWICK, JA ;
JOYCE, TB ;
HODSON, PD ;
KIGHTLEY, P ;
TAYLOR, RI ;
STIRLAND, DJ ;
GRIFFITHS, RJM .
VACUUM, 1990, 40 (04) :339-346
[2]   GAAS-ON-SI - IMPROVED GROWTH-CONDITIONS, PROPERTIES OF UNDOPED GAAS, HIGH MOBILITY, AND FABRICATION OF HIGH-PERFORMANCE ALGAAS GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS [J].
CHAND, N ;
REN, F ;
MACRANDER, AT ;
VANDERZIEL, JP ;
SERGENT, AM ;
HULL, R ;
CHU, SNG ;
CHEN, YK ;
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2343-2353
[3]   GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
BEAN, JC ;
BROWN, JM ;
MACRANDER, AT ;
MILLER, RC ;
HOPKINS, LC .
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) :69-77
[4]   EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES [J].
ELMASRY, N ;
TARN, JCL ;
HUMPHREYS, TP ;
HAMAGUCHI, N ;
KARAM, NH ;
BEDAIR, SM .
APPLIED PHYSICS LETTERS, 1987, 51 (20) :1608-1610
[5]   INTERACTIONS OF DISLOCATIONS IN GAAS GROWN ON SI SUBSTRATES WITH INGAAS-GAASP STRAINED LAYERED SUPERLATTICES [J].
ELMASRY, NA ;
TARN, JC ;
KARAM, NH .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3672-3677
[6]   GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON [J].
FANG, SF ;
ADOMI, K ;
IYER, S ;
MORKOC, H ;
ZABEL, H ;
CHOI, C ;
OTSUKA, N .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :R31-R58
[7]   PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY [J].
HOUDRE, R ;
MORKOC, H .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (02) :91-114
[8]  
LILIENTALWEBER Z, 1989, MATER RES SOC S P, V1448, P205
[9]   THREADING DISLOCATION DENSITY REDUCTION IN GAAS ON SI SUBSTRATES [J].
NISHIOKA, T ;
ITOH, Y ;
SUGO, M ;
YAMAMOTO, A ;
YAMAGUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2271-L2273
[10]   IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY [J].
NOZAWA, K ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1877-L1879