IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY

被引：15

作者：

NOZAWA, K

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L1877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1877 / L1879

页数：3

共 14 条

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[3]

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